IEEE Sensors Council video "NIR Sensors Based on Photolithographically Patterned PbS QD Photodiodes for CMOS Integration" by Epimitheas Georgitzikis, Pawel Malinowski, Luis Moreno Hagelsieb, Vladimir Pejovic, Griet Uytterhoeven, Stefano Guerrieri, Andreas Süss, Celso Cavaco, Konstantinos Chatzinis, Jorick Maes, Zeger Hens, Paul Heremans, and David Cheyns from Imec:
"Colloidal quantum dots based on lead sulfide are very attractive materials for the realization of novel infrared image sensors combining low cost synthesis and processing, deposition over large area and on any substrate. This work describes the building blocks that will enable the integration of QD photodiodes on top of a CMOS ROIC. Photodetectors with high detectivity and low dark current are demonstrated. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of high pixel pitch, opening the way towards high resolution monolithic infrared imagers."
"Colloidal quantum dots based on lead sulfide are very attractive materials for the realization of novel infrared image sensors combining low cost synthesis and processing, deposition over large area and on any substrate. This work describes the building blocks that will enable the integration of QD photodiodes on top of a CMOS ROIC. Photodetectors with high detectivity and low dark current are demonstrated. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of high pixel pitch, opening the way towards high resolution monolithic infrared imagers."
Imec PbS QD Photodiodes for CMOS Integration
Reviewed by MCH
on
December 07, 2018
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Reviewed by MCH
on
December 07, 2018
Rating:
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