VLSI Symposium tipsheet offers a preview of two image sensor papers:
A 3D stacked CMOS Image Sensor with Global-shutter mode and high speed capturing mode:
The paper by Toru Kondo et al. from Olympus Corp. will describe a 16MP 3D stacked CMOS image sensor with pixel level interconnections using 4 million micro bumps. The two semiconductor substrates are bonded by a 7.6um pitch micro-bump array, and the storage node array is comprised on the bottom substrate to improve parasitic light sensitivity (PLS). Both a 16Mpixel global-shutter mode with a -180dB PLS and 2Mpixel 10,000fps high speed image capturing are achieved.
A 3D stacked CMOS Image Sensor with a low noise technique:
The paper by Shang-Fu Yeh, et al., of TSMC will describe an 8Mpixel 3D-stacked low noise CMOS image sensor with Conditional Correlated Multiple Sampling (CCMS) technique. This technique is proposed to solve the low frame rate issue by using multiple small-range voltage ramps. A 0.66e-rms input referred temporal readout noise is obtained with a 5-times CCMS technique, and also both thermal noise and the random telegraph signal (RTS) noise can be
reduced by using CCMS technique.
A 3D stacked CMOS Image Sensor with Global-shutter mode and high speed capturing mode:
The paper by Toru Kondo et al. from Olympus Corp. will describe a 16MP 3D stacked CMOS image sensor with pixel level interconnections using 4 million micro bumps. The two semiconductor substrates are bonded by a 7.6um pitch micro-bump array, and the storage node array is comprised on the bottom substrate to improve parasitic light sensitivity (PLS). Both a 16Mpixel global-shutter mode with a -180dB PLS and 2Mpixel 10,000fps high speed image capturing are achieved.
A 3D stacked CMOS Image Sensor with a low noise technique:
The paper by Shang-Fu Yeh, et al., of TSMC will describe an 8Mpixel 3D-stacked low noise CMOS image sensor with Conditional Correlated Multiple Sampling (CCMS) technique. This technique is proposed to solve the low frame rate issue by using multiple small-range voltage ramps. A 0.66e-rms input referred temporal readout noise is obtained with a 5-times CCMS technique, and also both thermal noise and the random telegraph signal (RTS) noise can be
reduced by using CCMS technique.
VLSI Symposium Preview
Reviewed by MCH
on
April 26, 2015
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