WIPO published Omnivision patent applications WO/2009/099778 and WO/2009/100039 on BSI photodiode profile and WO/2009/100038 on black pixels in BSI technology. While the black pixel idea is quite obvious - removing photodiode implants to make black pixel light-insensitive, a really interesting part of these applications is Omnivision BSI pixel cross-section:
One can see that the photodiode extends well underneath the transistor region. Apparently, Omnivision did a great job to achieve lag-free operation with such a complex shape of the fully depleted photodiode.
The earlier Omnivision BSI applications, such as WO/2009/099483, WO/2009/09949, WO/2009/099494, WO/2009/099491 do not mention the extended photodiode profile. By the way, the last of these has an interesting part describing optimizations of the backside implant and the sensor's substrate thickness.
One can see that the photodiode extends well underneath the transistor region. Apparently, Omnivision did a great job to achieve lag-free operation with such a complex shape of the fully depleted photodiode.
The earlier Omnivision BSI applications, such as WO/2009/099483, WO/2009/09949, WO/2009/099494, WO/2009/099491 do not mention the extended photodiode profile. By the way, the last of these has an interesting part describing optimizations of the backside implant and the sensor's substrate thickness.
Omnivision BSI Pixel Crosss-section Revealed
Reviewed by MCH
on
October 10, 2009
Rating:
Reviewed by MCH
on
October 10, 2009
Rating:
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