VLSI Symposia to be held on June 18-22 in Honolulu, Hawaii, publishes its official Circuit and Technology programs. In total, there are 8 image sensor papers:
- C7‐1 A 252 × 144 SPAD Pixel FLASH LiDAR with 1728 Dual‐clock 48.8 ps TDCs, Integrated Histogramming and 14.9‐to‐1 Compression in 180nm CMOS Technology,
S. Lindner, C. Zhang*, I. Antolovic*, M. Wolf**, E. Charbon***,
EPFL/University of Zurich, *TUDelft, **University of Zurich, ***EPFL/TUDelft - C7‐2 A 220 m‐Range Direct Time‐of‐Flight 688 × 384 CMOS Image Sensor with Sub‐Photon Signal Extraction (SPSE) Pixels Using Vertical Avalanche Photo Diodes and 6 kHz Light Pulse Counters,
S, Koyama, M. Ishii, S. Saito, M. Takemoto, Y. Nose, A. Inoue, Y. Sakata, Y. Sugiura, M. Usuda, T. Kabe, S. Kasuga, M. Mori, Y. Hirose, A. Odagawa, T. Tanaka,
Panasonic Corporation - C7‐3 Multipurpose, Fully‐Integrated 128x128 Event‐Driven MD‐SiPM with 512 16‐bit TDCs with 45 ps LSB and 20 ns Gating,
A. Carimatto, A. Ulku, S. Lindner*, E. D’Aillon, S. Pellegrini**, B. Rae**, E. Charbon*,
TU Delft, *EPFL, **ST Microelectronics - C7‐4 A Two‐Tap NIR Lock‐In Pixel CMOS Image Sensor with Background Light Cancelling Capability for Non‐Contact Heart Rate Detection,
C. Cao, Y. Shirakawa, L. Tan, M. W. Seo, K. Kagawa, K. Yasutomi, T. Kosugi*, S. Aoyama*, N. Teranishi, N. Tsumura**, S. Kawahito,
Shizuoka University, *Brookman Technology, **Chiba University - T7‐2 An Over 120 dB Wide‐Dynamic‐range 3.0 μm Pixel Image Sensor with In‐pixel Capacitor of 41.7 fF/µm2 and High Reliability Enabled by BEOL 3D Capacitor Process,
M. Takase, S. Isono, Y. Tomekawa, T. Koyanagi, T. Tokuhara, M. Harada, Y. Inoue,
Panasonic Corporation - T15‐4 Next‐generation Fundus Camera with Full Color Image Acquisition in 0‐lx Visible Light by 1.12‐micron Square Pixel, 4K, 30‐fps BSI CMOS Image Sensor with Advanced NIR Multi‐spectral Imaging System,
H.Sumi, T.Takehara*,S.Miyazaki*, D.Shirahige*, K.Sasagawa*, T. Tokuda*, Y. Watanabe*, N.Kishi, J.Ohta*, M.Ishikawa,
The University of Tokyo, *NAIST - T15‐2 A Near‐ & Short‐Wave IR Tunable InGaAs Nanomembrane PhotoFET on Flexible Substrate for Lightweight and Wide‐Angle Imaging Applications,
Y.Li, A. Alian*, L.Huang, K. Ang, D. Lin*, D. Mocuta*, N. Collaert*, A.V‐Y Thean,
National University of Singapore, *IMEC - C23‐2 A 2pJ/pixel/direction MIMO Processing based CMOS Image Sensor for Omnidirectional Local Binary Pattern Extraction and Edge Detection,
X. Zhong, Q. Yu, A. Bermak**, C.‐Y. Tsui, M.‐K. Law*,
Hong Kong University of Science and Technology, *University of Macau, **also with Hamad Bin Khalifa University
Image Sensors at 2018 VLSI Symposia
Reviewed by MCH
on
April 13, 2018
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