Image Sensors at ISSCC 2017

ISSCC publishes its 2017 advance program. Sony is going to present its 3-die stacked sensor, a somewhat expected evolution of the stacking technology:

A 1/2.3in 20Mpixel 3-Layer Stacked CMOS Image Sensor with DRAM
T. Haruta, T. Nakajima, J. Hashizume, T. Umebayashi, H. Takahashi, K. Taniguchi, M. Kuroda, H. Sumihiro, K. Enoki, T. Yamasaki, K. Ikezawa, A. Kitahara, M. Zen, M. Oyama, H. Koga, H. Tsugawa, T. Ogita, T. Nagano, S. Takano, T. Nomoto
Sony Semiconductor Solutions, Atsugi, Japan
Sony Semiconductor Manufacturing, Atsugi, Japan
Sony LSI Design, Atsugi, Japan

Canon presents, apparently, a version of its IEDM global shutter sensor paper with more emphasis on the readout architecture:

A 1.8erms Temporal Noise Over 110dB Dynamic Range 3.4μm Pixel Pitch Global Shutter CMOS Image Sensor with Dual-Gain Amplifiers, SS-ADC and Multiple-Accumulation Shutter
M. Kobayashi, Y. Onuki, K. Kawabata, H. Sekine, T. Tsuboi, Y. Matsuno, H. Takahashi, T. Koizumi, K. Sakurai, H. Yuzurihara, S. Inoue, T. Ichikawa
Canon, Kanagawa, Japan

Other nice papers in the Imager session are listed below:

A 640×480 Dynamic Vision Sensor with a 9μm Pixel and 300Meps Address-Event Representation
B. Son, Y. Suh, S. Kim, H. Jung, J-S. Kim, C. Shin, K. Park, K. Lee, J. Park, J. Woo, Y. Roh, H. Lee, Y. Wang, I. Ovsiannikov, H. Ryu
Samsung Advanced Institute of Technology, Suwon, Korea;
Samsung Electronics, Pasadena, CA

A Fully Integrated CMOS Fluorescence Biochip for Multiplex Polymerase Chain-Reaction (PCR) Processes
A. Hassibi, R. Singh, A. Manickam, R. Sinha, B. Kuimelis, S. Bolouki, P. Naraghi-Arani, K. Johnson, M. McDermott, N. Wood, P. Savalia, N. Gamini
InSilixa, Sunnyvale, CA

A Programmable Sub-Nanosecond Time-Gated 4-Tap Lock-In Pixel CMOS Image Sensor for Real-Time Fluorescence Lifetime Imaging Microscopy
M-W. Seo, Y. Shirakawa, Y. Masuda, Y. Kawata, K. Kagawa, K. Yasutomi, S. Kawahito
Shizuoka University, Hamamatsu, Japan

A Sub-nW 80mlx-to-1.26Mlx Self-Referencing Light-to-Digital Converter with AlGaAs Photodiode
W. Lim, D. Sylvester, D. Blaauw
University of Michigan, Ann Arbor, MI

A 2.1Mpixel Organic-Film Stacked RGB-IR Image Sensor with Electrically Controllable IR Sensitivity
S. Machida, S. Shishido, T. Tokuhara, M. Yanagida, T. Yamada, M. Izuchi, Y. Sato, Y. Miyake, M. Nakata, M. Murakami, M. Harada, Y. Inoue
Panasonic, Osaka, Japan

A 0.44erms Read-Noise 32fps 0.5Mpixel High-Sensitivity RG-Less-Pixel CMOS Image Sensor Using Bootstrapping Reset
M-W. Seo, T. Wang, S-W. Jun, T. Akahori, S. Kawahito
Shizuoka University, Hamamatsu, Japan;
Brookman Technology, Hamamatsu, Japan

A 1ms High-Speed Vision Chip with 3D-Stacked 140GOPS ColumnParallel PEs for Spatio-Temporal Image Processing
T. Yamazaki, H. Katayama, S. Uehara, A. Nose, M. Kobayashi, S. Shida, M. Odahara, K. Takamiya, Y. Hisamatsu, S. Matsumoto, L. Miyashita, Y. Watanabe, T. Izawa, Y. Muramatsu, M. Ishikawa;
Sony Semiconductor Solutions, Atsugi, Japan;
Sony LSI Design, Atsugi, Japan
University of Tokyo, Bunkyo, Japan

The tutorials day includes one on deep learning processors:

Energy-Efficient Processors for Deep Learning
Marian Verhelst
KU Leuven, Heverlee, Belgium