e2v publishes its IISW 2015 papers on its web site:
"Electron Multiplying Device Made on a 180 nm Standard CMOS Imaging Technology" by Pierre Fereyre, Frédéric Mayer, Mathieu Fournier, Clément Buton, Timothée Brugière, and Rémi Barbier presents electron multiplying CMOS pixel:
e2v also publishes another IISW paper: "CMOS Charge Transfer TDI with Front Side Enhanced Quantum Efficiency" by F. Mayer, S. Pesenti, F. Barbier, H. Bugnet, J. Endicott, F. Devriere, T. Ligozat
"Electron Multiplying Device Made on a 180 nm Standard CMOS Imaging Technology" by Pierre Fereyre, Frédéric Mayer, Mathieu Fournier, Clément Buton, Timothée Brugière, and Rémi Barbier presents electron multiplying CMOS pixel:
e2v also publishes another IISW paper: "CMOS Charge Transfer TDI with Front Side Enhanced Quantum Efficiency" by F. Mayer, S. Pesenti, F. Barbier, H. Bugnet, J. Endicott, F. Devriere, T. Ligozat
e2v IISW 2015 Papers On-Line
Reviewed by MCH
on
June 23, 2015
Rating:
Reviewed by MCH
on
June 23, 2015
Rating:
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