Apple patent application US20140246568 "Photodiode with different electric potential regions for image sensors" by Chung Chun Wan proposes a vertically stacked fully pinned PDs, whereas the bottom one is used as a storage node (SN) for a GS pixel: "The storage node in global shutter pixels is usually located on the same surface of a semiconductor wafer as the photodiode region, and thus typically needs to be shielded in order to maintain the integrity of the charge stored in the storage node. Also, positioning the storage node on the same surface of a semiconductor wafer as the photodiode reduces the amount of surface area of the photodiode that can be exposed to light, and hence reduces the sensitivity of the pixel." So, here is the proposal:
Apple Proposes Global Shutter BSI Pixel
Reviewed by MCH
on
September 13, 2014
Rating:
Reviewed by MCH
on
September 13, 2014
Rating:
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