Apple keeps applying patents on global shutter pixel and its components. The US20140252201 application "Charge transfer in image sensors" by Xiangli Li, Xiaofeng Fan, and Chung Chun Wan proposes a doping structure for storage node SN, where the part near the transfer gate is lightly doped to create a potential barrier, said to be useful for multiple storage node pixels like this one:
Apple Applies for Charge Transfer Patent
Reviewed by MCH
on
September 22, 2014
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