TSMC proposes to use deep trench isolation to reduce crosstalk between BSI pixels. Its patent application US20120025199 covers two cases of deep trench isolation in BSI sensor. One goes through the whole BSI wafer thickness, thus completely isolating pixels one from another:
In the other version the deep trench starts from the backside, but stops before reaching the front surface:
Omnivision patent application US20120019695 proposes a process to create dark sidewalls 445 between color filters to reduce optical crosstalk:
In the other version the deep trench starts from the backside, but stops before reaching the front surface:
Omnivision patent application US20120019695 proposes a process to create dark sidewalls 445 between color filters to reduce optical crosstalk:
TSMC and Omnivision Build Walls Between Pixels
Reviewed by MCH
on
February 05, 2012
Rating:
Reviewed by MCH
on
February 05, 2012
Rating:
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