1/f and RTS Noise Reduction

As mentioned in Theses post, Oregon State University published Drake A. Miller's PhD Thesis "Random Dopants and Low-Frequency Noise Reduction in Deep-Submicron MOSFET Technology". The thesis is quite rich in experimental data os pixel source follower noise. The figure below shows more than order of magnitude variations in 1/f noise across the wafer:

Noise spectral power plots of 10 devices taken from
10 different locations across the wafer (see inset).

Any channel doping, such as Vth adjust, significantly increases 1/f and RTS noise:

Box plots of source follower noise power spectrum plots.
Red (Dark) boxes are doped devices.
Green (Light) boxes are undoped “native” transistors.

Few Vth adjust splits were measured:

It's not clear why S4 and S7 are not shown, but S1-S3 clearly show noise improvement:

The total read noise histogram clearly demonstrates the advantage of lightly doped source follower:

RTS Statistics shows the same: