IEEE Sensors 2010 conference held on Nov. 1-4 in Hawaii had few image sensor papers:
IN-PIXEL BURIED-CHANNEL SOURCE FOLLOWER IN CMOS IMAGE SENSORS EXPOSED TO X-RAY RADIATION
Y. Chen, J. Tan, X. Wang, A.J. Mierop, and A.J.P. Theuwissen
Delft University of Technology, THE NETHERLANDS
CMOSIS nv, BELGIUM
DALSA B.V., THE NETHERLANDS
Harvest Imaging, BELGIUM
LOW-POWER AND HIGH-SPEED CURRENT-MODE CMOS IMAGER WITH 1T BIASING SCHEME
F. Tang and A. Bermak
Hong Kong University of Science and Technology, HONG KONG
MISMATCH REDUCTION FOR DARK CURRENT SUPPRESSION
D. Sander and P. Abshire
University of Maryland, USA
ARCHITECTURE OF THREE DIMENSIONAL COMPRESSIVE ACQUISITION CMOS IMAGE SENSOR
M. Zhang, A. Bermak, and P. Xu
Hong Kong University of Science and Technology, HONG KONG
A 64 x 64 PIXELS 30μW VISION SENSOR WITH BINARY DATA COMPRESSION
N. Massari, M. De Nicola, N. Cottini, and M. Gottardi
Fondazione Bruno Kessler, ITALY
A VARIABLE TOPOLOGY PARTITIONED PIXEL AMPLIFIER FOR LOW AND HIGH LIGHT LEVEL DETECTION IN A CMOS IMAGER
Y. Dattner, and O. Yadid-Pecht
University of Calgary, CANADA
The best poster award went to:
FLUORESCENT IMAGING AND LOCALIZATION WITH ANGLE SENSITIVE PIXEL ARRAYS IN STANDARD CMOS
A. Wang, P.R. Gill, and A. Molnar
Cornell University, USA
The 2nd best student paper award went to Yang Xu for her master thesis:
A CMOS IMAGE SENSOR WITH CHARGE DOMAIN INTERLACE SCAN
Y. Xu, A. Mierop, and A.J.P. Theuwissen
Delft University of Technology, THE NETHERLANDS
DALSA Professional Imaging, THE NETHERLANDS
Harvest Imaging, BELGIUM
Interlace scanning in CCDs was/is always done in the charge domain, in CMOS this was done in the voltage or digital domain with extra loss of SNR. In the work of Xu, charge domain interlace scanning in CMOS imagers is realized for the first time, with the same SNR characteristics as with CCDs.
Thanks to A.T. for letting me know!
IN-PIXEL BURIED-CHANNEL SOURCE FOLLOWER IN CMOS IMAGE SENSORS EXPOSED TO X-RAY RADIATION
Y. Chen, J. Tan, X. Wang, A.J. Mierop, and A.J.P. Theuwissen
Delft University of Technology, THE NETHERLANDS
CMOSIS nv, BELGIUM
DALSA B.V., THE NETHERLANDS
Harvest Imaging, BELGIUM
LOW-POWER AND HIGH-SPEED CURRENT-MODE CMOS IMAGER WITH 1T BIASING SCHEME
F. Tang and A. Bermak
Hong Kong University of Science and Technology, HONG KONG
MISMATCH REDUCTION FOR DARK CURRENT SUPPRESSION
D. Sander and P. Abshire
University of Maryland, USA
ARCHITECTURE OF THREE DIMENSIONAL COMPRESSIVE ACQUISITION CMOS IMAGE SENSOR
M. Zhang, A. Bermak, and P. Xu
Hong Kong University of Science and Technology, HONG KONG
A 64 x 64 PIXELS 30μW VISION SENSOR WITH BINARY DATA COMPRESSION
N. Massari, M. De Nicola, N. Cottini, and M. Gottardi
Fondazione Bruno Kessler, ITALY
A VARIABLE TOPOLOGY PARTITIONED PIXEL AMPLIFIER FOR LOW AND HIGH LIGHT LEVEL DETECTION IN A CMOS IMAGER
Y. Dattner, and O. Yadid-Pecht
University of Calgary, CANADA
The best poster award went to:
FLUORESCENT IMAGING AND LOCALIZATION WITH ANGLE SENSITIVE PIXEL ARRAYS IN STANDARD CMOS
A. Wang, P.R. Gill, and A. Molnar
Cornell University, USA
The 2nd best student paper award went to Yang Xu for her master thesis:
A CMOS IMAGE SENSOR WITH CHARGE DOMAIN INTERLACE SCAN
Y. Xu, A. Mierop, and A.J.P. Theuwissen
Delft University of Technology, THE NETHERLANDS
DALSA Professional Imaging, THE NETHERLANDS
Harvest Imaging, BELGIUM
Interlace scanning in CCDs was/is always done in the charge domain, in CMOS this was done in the voltage or digital domain with extra loss of SNR. In the work of Xu, charge domain interlace scanning in CMOS imagers is realized for the first time, with the same SNR characteristics as with CCDs.
Thanks to A.T. for letting me know!
IEEE Sensors 2010 Conference Papers and Awards
Reviewed by MCH
on
November 24, 2010
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