Samsung presented a poster paper "The Effects of Nano-Sized Defects on Dark Current of High End CMOS Image Sensor" on May 2008 Electrochemical Society Meeting. The main claim is that defects in epi layer cause a significant increase in hot pixels. The article compares few epi wafer vendors and shows dark current difference between them.
Another Samsung paper presented on 2008 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Nice, France describes WLP process flow entirely developed by Samsung. The claim is that the new process is cheaper and better than the available alternatives, such as Shellcase by Tessera.
Another Samsung paper presented on 2008 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Nice, France describes WLP process flow entirely developed by Samsung. The claim is that the new process is cheaper and better than the available alternatives, such as Shellcase by Tessera.
Recent Samsung Papers
![Recent Samsung Papers]()
Reviewed by MCH
on
October 06, 2008
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